Browsing Singapore-MIT Alliance (SMA) by Author "Antoniadis, Dimitri A."
Now showing items 1-18 of 18
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Charge Storage Effect in a Trilayer Structure Comprising Germanium Nanocrystals
(2002-01)A metal-insulator-semiconductor (MIS) device with a trilayer insulator structure consisting of sputtered SiO₂ (~50nm)/evaporated pure germanium (Ge) layer (2.4nm)/rapid thermal oxide (~5nm) was fabricated on a p-type ... -
Charge storage in nanocrystal systems: Role of defects?
(2004-01)Wet thermal oxidations of polycrystalline Si₀.₅₄Ge₀.₄₆ films at 600°C for 30 and 50 min were carried out. A stable mixed oxide was obtained for films that were oxidized for 50 min. ... -
Charge Storage Mechanism and Size Control of Germanium Nanocrystals in a Tri-layer Insulator Structure of a MIS Memory Device
(2003-01)A method of synthesizing and controlling the size of germanium nanocrystals is developed. A tri-layer metal-insulator-semiconductor (MIS) memory device structure comprising of a thin (~5nm) silicon dioxide (SiO₂) ... -
Dependence of nanocrystal formation and charge storage/retention performance of a tri-layer memory structure on germanium concentration and tunnel oxide thickness
(2004-01)The effect of germanium (Ge) concentration and the rapid thermal oxide (RTO) layer thickness on the nanocrystal formation and charge storage/retention capability of a trilayer metal-insulator-semiconductor device was ... -
Effect of Oxygen on Ni-Silicided FUSI Metal Gate
(2006-01)Continual evolution of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-65 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ... -
Effect of Pt on agglomeration and Ge out-diffusion in Ni(Pt) germanosilicide
(2004-01)The effect of Ni and Ni(Pt) alloy with ~5 and 10 at. % Pt on the agglomeration and Ge out-diffusion in Nickel germanosilicide formed on Si₀.₇₅Ge₀.₂₅(100) has been studied. A ... -
Effects of Platinum on NiPtSiGe/n-SiGe and NiPtSi/n-Si Schottky Contacts
(2005-01)Solid phase reaction of NiPt/Si and NiPt/SiGe is one of the key issues for silicide (germanosilicide) technology. Especially, the NiPtSiGe, in which four elements are involved, is a very complex system. As a result, a ... -
Formation of Nanocrystalline Germanium via Oxidation of Si₀.₅₄Ge₀.₄₆ for Memory Device Applications
(2003-01)In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si₀.₅₄Ge₀.₄₆ films. In dry oxidation, Ge was rejected from the growing ... -
The interfacial reaction of Ni on (100) Si₁â‚‹xGex (x=0, 0.25) and (111) Ge
(2003-01)The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, ... -
MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels
(2003-01)Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with ... -
Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering
(2005-01)Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) ... -
Poly-Si₁â‚‹xGex Film Growth for Ni Germanosilicided Metal Gate
(2005-01)Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 ... -
Si Industry at a Crossroads: New Materials or New Factories?
(2002-01)Many trends in the silicon industry could be interpreted as the herald of the end of traditional Si scaling. If this premise holds, future performance and system-on-chip applications may not be reached with conventional ... -
SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication
(2002-01)In this work, we have developed two different fabrication processes for relaxed Si₁₋xGex-on-insulator (SGOI) substrates: (1) SGOI fabrication by etch-back approach, and (2) by "smart-cut" approach utilizing ... -
SiGe-On-Insulator (SGOI): Two Structures for CMOS Application
(2003-01)Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance ... -
Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Siâ‚â‚‹xGex/Si virtual substrates
(2002-01)We have fabricated strained Ge channel p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si₀.₃Ge₀.₇ virtual substrates. The poor interface between silicon dioxide (SiO₂) and the Ge channel ... -
Synthesis of Germanium Nanocrystals and its Possible Application in Memory Devices
(2002-01)A novel method of synthesizing and controlling the size of germanium nanocrystals was developed. A tri-layer structure comprising of a thin (~5nm) SiO₂ layer grown using rapid thermal oxidation (RTO), followed by a ... -
Workfunction Tuning of n-Channel MOSFETs Using Interfacial Yttrium Layer in Fully Silicided Nickel Gate
(2007-01)Continual scaling of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-45 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...
