Browsing Singapore-MIT Alliance (SMA) by Subject "1.3µm"

Now showing items 1-1 of 1

Molecular Beam Epitaxy of Ga(In)AsN/GaAs Quantum Wells towards 1.3µm and 1.55µm

Wang, S.Z.; Yoon, Soon Fatt; Ng, Teck Khim; Loke, W.K.; Fan, W.J. (2002-01)

In this article, we report an attempt of extending the InGaAsN materials towards 1.3µm and 1.55µm wavelength. All these InGaAsN samples are grown in a plasma-assisted solid-source molecular-beam epitaxy (SS-MBE) system. ...