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Semiconductor Noise

dc.contributor.authorAdler, Richard B.en_US
dc.contributor.authorBess, L.en_US
dc.contributor.authorMcWhorter, A. L.en_US
dc.date.accessioned2010-02-01T23:29:15Z
dc.date.available2010-02-01T23:29:15Z
dc.date.issued1955-01-15en_US
dc.identifierRLE_QPR_036_XIIIen_US
dc.identifier.urihttp://hdl.handle.net/1721.1/51256
dc.descriptionContains research objectives and reports on two research projects.en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Quarterly Progress Report, January 15, 1955en_US
dc.relation.ispartofSemiconductor Noiseen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Quarterly Progress Report, no. 36en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherSemiconductor Noiseen_US
dc.subject.otherResearch Objectivesen_US
dc.subject.otherTheory of 1/f Noise in Semiconductor Filamentsen_US
dc.subject.otherRole of Surface Oxide Layers in 1/f Noiseen_US
dc.titleSemiconductor Noiseen_US
dc.typeTechnical Reporten_US


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