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Semiconductor Surface Studies

dc.contributor.authorJoannopoulos, John D.en_US
dc.date.accessioned2010-07-15T22:11:01Z
dc.date.available2010-07-15T22:11:01Z
dc.date.issued1986-01en_US
dc.identifierRLE_PR_128_10en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/56976
dc.descriptionContains research summary and reports on three research projects.en_US
dc.description.sponsorshipJoint Services Electronics Program (Contract DAAG29-83-K-0003)en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1986en_US
dc.relation.ispartofSemiconductor Surface Studiesen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 128en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherSemiconductor Surface Studiesen_US
dc.subject.otherSurface Energy Barriersen_US
dc.subject.otherSurface Reaction Channelsen_US
dc.subject.otherStructural Phase Transitionsen_US
dc.titleSemiconductor Surface Studiesen_US
dc.typeTechnical Reporten_US


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