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dc.contributor.authordel Alamo, Jesus A.en_US
dc.contributor.authorBahl, Sandeep R.en_US
dc.contributor.authorBennett, Brian B.en_US
dc.contributor.authorGreenberg, Daviden_US
dc.contributor.authorAzzam, Waliden_US
dc.contributor.authorMakhdumi, Shaziaen_US
dc.contributor.authorRammo, Feraseen_US
dc.date.accessioned2010-07-16T03:59:18Z
dc.date.available2010-07-16T03:59:18Z
dc.date.issued1988-01-01 to 1988-12-31en_US
dc.identifierRLE_PR_131_01_01s_07en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/57056
dc.descriptionContains report on one research project.en_US
dc.description.sponsorshipJoint Services Electronics Program (Contract DAAL03-86-K-0002)en_US
dc.description.sponsorshipJoint Services Electronics Program (Contract DAALO3-89-C-0001)en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1988en_US
dc.relation.ispartofSolid State Physics, Electronics And Opticsen_US
dc.relation.ispartofMaterials and Fabricationen_US
dc.relation.ispartofHigh-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunicationsen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 131en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherHigh-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunicationsen_US
dc.titleHigh-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFET's) for Telecommunicationsen_US
dc.typeTechnical Reporten_US


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