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dc.contributor.authorKastner, Marc A.en_US
dc.contributor.authorField, Stuart B.en_US
dc.contributor.authorMeirav, Udien_US
dc.contributor.authorPark, Samuel L.en_US
dc.contributor.authorScott-Thomas, John H. F.en_US
dc.date.accessioned2010-07-16T03:59:27Z
dc.date.available2010-07-16T03:59:27Z
dc.date.issued1988-01-01 to 1988-12-31en_US
dc.identifierRLE_PR_131_01_03s_04en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/57057
dc.descriptionContains report on one research project.en_US
dc.description.sponsorshipJoint Services Electronics Program (Contract DAAL03-86-K-0002)en_US
dc.description.sponsorshipJoint Services Electronics Program (Contract DAAL03-89-C-0001)en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1988en_US
dc.relation.ispartofSolid State Physics, Electronics And Opticsen_US
dc.relation.ispartofSurfaces and Intersurfacesen_US
dc.relation.ispartofUltralow Temperature Studies of Nanometer Size Semiconductor Devicesen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 131en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherUltralow Temperature Studies of Nanometer Size Semiconductor Devicesen_US
dc.titleUltralow Temperature Studies of Nanometer Size Semiconductor Devicesen_US
dc.typeTechnical Reporten_US


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