Show simple item record

Gas Source Molecular Beam Epitaxy of Compound Semiconductors

dc.contributor.authorKolodziejski, Leslie A.en_US
dc.contributor.authorMnushkina, Irinaen_US
dc.contributor.authorPetrich, Gale S.en_US
dc.contributor.authorCoronado, Christopher A.en_US
dc.contributor.authorFisher, Philip A.en_US
dc.contributor.authorHo, Easenen_US
dc.contributor.authorHouse, Jody L.en_US
dc.contributor.authorGeraci, James R.en_US
dc.contributor.authorLim, Kuo-Yien_US
dc.contributor.authorLu, Kanen_US
dc.contributor.authorHaus, Hermann A.en_US
dc.contributor.authorSmith, Henry I.en_US
dc.contributor.authorDamask, Jay N.en_US
dc.contributor.authorFonstad, Clifton G., Jr.en_US
dc.contributor.authorAhadian, Joseph F.en_US
dc.contributor.authorThompson, Carl V.en_US
dc.contributor.authorDonovan, Sean M.en_US
dc.date.accessioned2010-07-16T19:26:41Z
dc.date.available2010-07-16T19:26:41Z
dc.date.issued1993-01-01 to 1993-12-31en_US
dc.identifierRLE_PR_136_01_01s_03en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/57270
dc.descriptionContains an introduction and reports on six research projects.en_US
dc.description.sponsorshipAdvanced Research Projects Agency Subcontract 284-25041en_US
dc.description.sponsorshipJoint Services Electronics Program Contract DAAL03-92-C-0001en_US
dc.description.sponsorshipNational Center for Integrated Photonic Technology Contract 542-381en_US
dc.description.sponsorshipNational Science Foundation Grant DMR 92-02957en_US
dc.description.sponsorshipNational Science Foundation Contract DMR 92-02957en_US
dc.description.sponsorshipNational Science Foundation Grant DMR 90-22933en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1993en_US
dc.relation.ispartofSolid State Physics, Electronics and Opticsen_US
dc.relation.ispartofMaterials and Fabricationen_US
dc.relation.ispartofGas Source Molecular Beam Epitaxy of Compound Semiconductorsen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 136en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherGas Source Molecular Beam Epitaxy of Compound Semiconductorsen_US
dc.subject.otherGas Source Molecular Beam Epitaxy of ZnSeen_US
dc.subject.otherGas Source Molecular Beam Epitaxy of ZnSe:CIen_US
dc.subject.otherGas Source Molecular Beam Epitaxy of ZnSe:Nen_US
dc.subject.otherNovel Epitaxial III-V Buffer Layers for Wide Bandgap II-VI Visible Sourcesen_US
dc.subject.otherIntegrated Photonic Devicesen_US
dc.subject.otherThe Channel-Dropping Filteren_US
dc.subject.otherHeterovalent Interfaces Composed of II-VI/II-V Heterostructuresen_US
dc.subject.otherOptoelectronic Very Large Scale Integrated Circuitsen_US
dc.subject.otherHeteroepitaxy of GaAs onto Corrugated Surfaces of Sien_US
dc.titleGas Source Molecular Beam Epitaxy of Compound Semiconductorsen_US
dc.typeTechnical Reporten_US


Files in this item

Thumbnail
Name:
RLE_PR_136_01_01s_03.pdf
Size:
3.145Mb
Format:
PDF
View/Open

This item appears in the following Collection(s)

Show simple item record