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Chemical Reaction Dynamics at Surfaces

dc.contributor.authorCeyer, Sylvia T.en_US
dc.contributor.authorPullman, David P.en_US
dc.contributor.authorTsekouras, Athanassios A.en_US
dc.contributor.authorZhang, Zheen_US
dc.contributor.authorGosalvez, David B.en_US
dc.contributor.authorYang, Julius J.en_US
dc.date.accessioned2010-07-16T19:28:09Z
dc.date.available2010-07-16T19:28:09Z
dc.date.issued1993-01-01 to 1993-12-31en_US
dc.identifierRLE_PR_136_01_04s_03en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/57276
dc.descriptionContains reports on four research projects.en_US
dc.description.sponsorshipJoint Services Electronics Program Contract DAAL03-92-C-0001en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1993en_US
dc.relation.ispartofSolid State Physics, Electronics and Opticsen_US
dc.relation.ispartofSurfaces and Interfacesen_US
dc.relation.ispartofChemical Reaction Dynamics at Surfacesen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 136en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherChemical Reaction Dynamics at Surfacesen_US
dc.subject.otherNew Mechanism for Dissociative Chemisorption on Si: Atom Abstractionen_US
dc.subject.otherModel for Atom Abstraction by Surfacesen_US
dc.subject.otherAtom Abstractionen_US
dc.subject.otherRelationship of Atom Abstraction to Thin Film Growthen_US
dc.subject.otherEtching of Si(100) by Energetic Fluorineen_US
dc.titleChemical Reaction Dynamics at Surfacesen_US
dc.typeTechnical Reporten_US


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