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Compound Semiconductor Materials and Devices

dc.contributor.authorFonstad, Clifton G., Jr.en_US
dc.contributor.authorAhadian, Joseph F.en_US
dc.contributor.authorRoyter, Yakoven_US
dc.contributor.authorPatterson, Steven G.en_US
dc.contributor.authorViadyananthan, Praveen T.en_US
dc.contributor.authorPostigo, P. Aitoren_US
dc.contributor.authorPetrich, Gale S.en_US
dc.contributor.authorKolodziejski, Leslie A.en_US
dc.contributor.authorMikkelson, James M.en_US
dc.contributor.authorGoodhue, William D.en_US
dc.contributor.authorBraddock, Daviden_US
dc.contributor.authorMull, Daniel E.en_US
dc.contributor.authorChoy, Henry K.en_US
dc.contributor.authorRam, Rajeev J.en_US
dc.contributor.authorHoshino, Isakoen_US
dc.contributor.authorPrasad, Sheilaen_US
dc.contributor.authorWang, Haifengen_US
dc.contributor.authorHemenway, Roe B., Jr.en_US
dc.contributor.authorDeming, Roberten_US
dc.contributor.authorKnoedl, Thomasen_US
dc.contributor.authorLondon, Joannaen_US
dc.contributor.authorCrankshaw, Donald S.en_US
dc.contributor.authorPan, Janet L.en_US
dc.date.accessioned2010-07-17T01:38:45Z
dc.date.available2010-07-17T01:38:45Z
dc.date.issued1997-01-01 to 1997-12-31en_US
dc.identifierRLE_PR_140_01_01s_01en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/57412
dc.descriptionContains table of contents for Part I, table of contents for Section 1, an introduction, reports on thirteen research projects and a list of publications.en_US
dc.description.sponsorshipDefense Advanced Research Projects Agencyen_US
dc.description.sponsorshipJoint Services Electronics Program Grant DAAH04-95-1-0038en_US
dc.description.sponsorshipMIT Lincoln Laboratoryen_US
dc.description.sponsorshipNational Science Foundationen_US
dc.description.sponsorshipU.S. Navy - Office of Naval Researchen_US
dc.description.sponsorshipDefense Advanced Research Projects Agency/National Center for Integrated Photonics Technologyen_US
dc.description.sponsorshipMIT Lincoln Laboratoryen_US
dc.description.sponsorshipNational Center for Integrated Photonics Technologyen_US
dc.description.sponsorshipUniversity of Ulm, Ulm, Germanyen_US
dc.description.sponsorshipGeneral Motors Corporation Fellowshipen_US
dc.description.sponsorshipLockheed-Martin Corporationen_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1997en_US
dc.relation.ispartofSolid State Physics, Electronics and Opticsen_US
dc.relation.ispartofMaterials and Fabricationen_US
dc.relation.ispartofCompound Semiconductor Materials and Devicesen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 140en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherCompound Semiconductor Materialsen_US
dc.subject.otherCompound Semiconductor Devicesen_US
dc.subject.otherEpitaxy-on-Electronics Integration Technologyen_US
dc.subject.otherInGaAsP/GaAs Light Emitting Diodes Monolithically Integrated on GaAs VLSI Electronicsen_US
dc.subject.otherThe OPTOCHIP Projecten_US
dc.subject.otherLow-Temperature Growth of Aluminum-Free InGaP/GaAs/InGaAs LEDen_US
dc.subject.otherLaser Diode Heterostructures by Solid Source MBE using a GaP Cellen_US
dc.subject.otherDry-Etch Technololgy for Aluminum-free InGaP/GaAs/InGaAs Laser Diode Facetsen_US
dc.subject.otherDry-Etch Technololgy for Aluminum-free InGaP/GaAs/InGaAs Laser Diode Deflectorsen_US
dc.subject.otherMonolithic Integration of Vertical-Cavity Surface-Emitting Laser Diodes on GaAs VLSI Electronicsen_US
dc.subject.otherHyperthermal Molecular Beam Dry Etching of III-V Compound Semiconductorsen_US
dc.subject.otherMicrowave Characterization of Optoelectronic Devicesen_US
dc.subject.otherMonolithic Integration of 1550 nm Photodetectors on GaAs Transimpedance Amplifier Chipsen_US
dc.subject.otherDesign of VCSEL-Based Resonant Cavity Enhanced Photodetectorsen_US
dc.subject.otherAnalysis of VCSEL-Based Resonant Cavity Enhanced Photodetectorsen_US
dc.subject.otherSi-on-GaAsen_US
dc.subject.otherMonolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using EoE Techniquesen_US
dc.subject.otherMonolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using SOI Techniquesen_US
dc.subject.otherMonolithic Heterogeneous Integration of Si CMOS with GaAs Optoelectronic Devices using MEMS Techniquesen_US
dc.subject.otherAligned, Selective-Area Wafer-Scale Bonding of Optoelectronic Devices on GaAs Integrated Circuitsen_US
dc.subject.otherNormal-Incidence Quantum Well Intersubband Photodetectors (QWIPs) for Monolithic Integrationen_US
dc.titleCompound Semiconductor Materials and Devicesen_US
dc.typeTechnical Reporten_US


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