A 0.16mm2 completely on-chip switched-capacitor DC-DC converter using digital capacitance modulation for LDO replacement in 45nm CMOS

Author(s)
Ramadass, Yogesh Kumar; Fayed, Ayman A.; Haroun, Baher; Chandrakasan, Anantha P.
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Abstract
A completely on-chip switched-capacitor DC-DC converter that occupies 0.16 mm2 [mm superscript 2] is implemented in a 45 nm CMOS process. The converter delivers 8 mA output current while maintaining load voltages from 0.8 to 1 V from a 1.8 V input supply. A digital capacitive modulation scheme is employed to maintain the converter efficiency between 50 to 70% over a wide range of load current levels.
Date issued
2010-02
URI
http://hdl.handle.net/1721.1/61742
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology Laboratories
Journal
IEEE International Solid-State Circuits Conference.. Digest of technical papers
Publisher
Institute of Electrical and Electronic Engineers
Citation
Ramadass, Y. et al. “A 0.16mm2 completely on-chip switched-capacitor DC-DC converter using digital capacitance modulation for LDO replacement in 45nm CMOS.” Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2010 IEEE International. 2010. 208-209. © 2010, IEEE
Version: Final published version
Other identifiers
INSPEC Accession Number: 11204884
ISBN
978-1-4244-6033-5
ISSN
0193-6530
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