Femtosecond laser processing of crystalline silicon

dc.contributor.author	Tran, D. V.
dc.contributor.author	Lam, Yee Cheong
dc.contributor.author	Zheng, H. Y.
dc.contributor.author	Murukeshan, V. M.
dc.contributor.author	Chai, J.C.
dc.contributor.author	Hardt, David E.
dc.date.accessioned	2004-12-14T19:31:42Z
dc.date.available	2004-12-14T19:31:42Z
dc.date.issued	2005-01
dc.identifier.uri	http://hdl.handle.net/1721.1/7449
dc.description.abstract	This paper reports the surface morphologies and ablation of crystalline silicon wafers irradiated by infra-red 775 nm Ti:sapphire femtosecond laser. The effects of energy fluences (below and above single-pulse modification) with different number of pulses were studied. New morphological features such as pits, cracks formation, Laser-Induced Periodic Surface Structures (LIPSS) and ablation were observed. The investigation indicated that there are two distinct mechanisms under femtosecond laser irradiation: low fluence regime with different morphological features and high fluence regime with high material removal and without complex morphological features.	en
dc.description.sponsorship	Singapore-MIT Alliance (SMA)	en
dc.format.extent	967927 bytes
dc.format.mimetype	application/pdf
dc.language.iso	en
dc.relation.ispartofseries	Innovation in Manufacturing Systems and Technology (IMST);
dc.subject	crystalline silicon	en
dc.subject	femtosecond laser	en
dc.subject	morphology	en
dc.subject	ablation	en
dc.subject	incubation effect	en
dc.title	Femtosecond laser processing of crystalline silicon	en
dc.type	Article	en