Browsing Advanced Materials for Micro- and Nano-Systems (AMMNS) by Author "Chen, Peng"
Now showing items 1-3 of 3
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High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD
(2005-01)The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. ... -
Optically pumped InxGa₁â‚‹xN/InyGa₁â‚‹yN multiple quantum well vertical cavity surface emitting laser operating at room temperature.
(2004-01)Room temperature vertical cavity lasing at the wavelength of 433nm has been successfully realized in InxGa₁â‚‹xN/InyGa₁â‚‹yN multiple quantum well without Bragg mirrors under photo-excitation. At high excitation intensity, ... -
Plastic Relaxation In Single InᵡGa₁â‚‹ᵡN/GaN Epilayers Grown On Sapphire
(2004-01)Plastic relaxation was observed in InᵡGa₁â‚‹ᵡN/GaN epilayers grown on c-plane sapphire substrates. The relaxation obeys the universal hyperbolic relation between the strain and the reciprocal of the layer ...
