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    • Enhancement in Indium Incorporation for InGaN Grown on InN Intermediate Layer 

      Hartono, Haryono; Chen, P.; Fitzgerald, Eugene A.; Chua, Soo-Jin (2006-01)
      InN has been grown on GaN with a thin intermediate layer of InGaN by metalorganic chemical vapor deposition (MOCVD) to further enhance indium incorporation in subsequent InGaN layer. Trimethylindium (TMI) and ammonia (NH₃) ...