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dc.contributor.authorFonstad, Clifton G. Jr.
dc.date.accessioned2003-12-20T19:43:44Z
dc.date.available2003-12-20T19:43:44Z
dc.date.issued2002-01
dc.identifier.urihttp://hdl.handle.net/1721.1/3978
dc.description.abstractThis paper presents a new technique for the monolithic heterogeneous integration of compound semiconductor devices with silicon integrated circuits, and establishes the theoretical foundation for a key element of the process, tailored magnetic attraction and retention. It is shown how a patterned thin film of hard magnetic material can be used to engineer the attraction between the film and nanopills covered with a soft magnetic material. With a suitable choice of pattern, it is anticipated that it will be possible to achieve complete filling of recesses in the surface of fully-processed integrated circuit wafers, preparatory to subsequent processing to fabricate the nanopills into heterostructure devices integrated monolithically with the pre-existing electronics.en
dc.description.sponsorshipSingapore-MIT Alliance (SMA)en
dc.format.extent96834 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_US
dc.relation.ispartofseriesAdvanced Materials for Micro- and Nano-Systems (AMMNS);
dc.subjectoptoelectronicsen
dc.subjectheterogeneous integrationen
dc.subjectself assemblyen
dc.subjectVCSELsen
dc.subjectIII-V heterostructuresen
dc.titleMagnetically-Assisted Statistical Assembly - a new heterogeneous integration techniqueen
dc.typeArticleen


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