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dc.contributor.authorAnderson, Erik H.en_US
dc.contributor.authorCarter, James M.en_US
dc.contributor.authorChu, Williamen_US
dc.contributor.authorKomatsu, Kazuen_US
dc.contributor.authorQuek, Hui Mengen_US
dc.contributor.authorYen, Anthony T.en_US
dc.contributor.authorPlotnik, Irvingen_US
dc.contributor.authorSchattenburg, Mark L.en_US
dc.contributor.authorSmith, Henry I.en_US
dc.contributor.authorAkhtar, Salmonen_US
dc.contributor.authorKu, Yao C.en_US
dc.contributor.authorToth, Markusen_US
dc.contributor.authorPorter, Marken_US
dc.contributor.authorAntoniadis, Dimitri A.en_US
dc.contributor.authorField, S.en_US
dc.contributor.authorKastner, Marc A.en_US
dc.contributor.authorLicini, Jerome C.en_US
dc.contributor.authorMeirav, Udien_US
dc.contributor.authorPark, Samuel L.en_US
dc.contributor.authorScott-Thomas, John H. F.en_US
dc.contributor.authorBagwell, Phillip F.en_US
dc.contributor.authorIsmail, Khaliden_US
dc.contributor.authorOrlando, Terry P.en_US
dc.contributor.authorShahidi, Ghavam G.en_US
dc.contributor.authorChou, Stephen Y.en_US
dc.contributor.authorAjuria, Sergioen_US
dc.contributor.authorAtwater, Henry A.en_US
dc.contributor.authorFloro, Jerrold A.en_US
dc.contributor.authorGarrison, Stephen M.en_US
dc.contributor.authorPalmer, Joyce E.en_US
dc.contributor.authorThompson, Carl V.en_US
dc.contributor.authorCanizares, Claude R.en_US
dc.date.accessioned2010-07-16T03:40:14Z
dc.date.available2010-07-16T03:40:14Z
dc.date.issued1987-01en_US
dc.identifierRLE_PR_129_01en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/57008
dc.descriptionContains reports on sixteen research projects.en_US
dc.description.sponsorshipJoint Services Electronics Program (Contract DAALO3-86-K-0002)en_US
dc.description.sponsorshipNational Science Foundation (Grant ECS 85-06565)en_US
dc.description.sponsorshipLawrence Livermore Laboratory (Subcontract 9459005)en_US
dc.description.sponsorshipSemiconductor Research Corporation (Contract 86-05-080)en_US
dc.description.sponsorshipJoint Services Electronics Program (Contract DAAG-29-83-K-0003)en_US
dc.description.sponsorshipNational Science Foundation (Grant ECS 85-03443)en_US
dc.description.sponsorshipU.S. Air Force - Office of Scientific Research (Contract AFOSR-85-0376)en_US
dc.description.sponsorshipU.S. Air Force - Office of Scientific Research (Contract AFOSR-85-0154)en_US
dc.description.sponsorshipU.S. Air Force - Office of Scientific Research (Grant AFSOSR 85-0154)en_US
dc.description.sponsorshipExxon Foundationen_US
dc.description.sponsorshipNational Aeronautics and Space Administration (Grant NGL22-009-683)en_US
dc.description.sponsorshipCollaboration with KMS Fusion, Inc.en_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1987en_US
dc.relation.ispartofSubmicron Structures Technology and Researchen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 129en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherSubmicron Structures Technologyen_US
dc.subject.otherSubmicron Structures Researchen_US
dc.subject.otherSubmicron Structures Laboratoryen_US
dc.subject.otherMicrofabrication at Linewidths of 0.1 μm and Belowen_US
dc.subject.otherImproved Mask Technology for X-Ray Lithographyen_US
dc.subject.otherTheoretical Analysis of the Lithography Processen_US
dc.subject.otherElectronic Conduction in One-Dimensional Semiconductor Devicesen_US
dc.subject.otherSurface Superlattice Formation in Silicon Inversion Layers Using 0.2 μm Period Grating-Gate Field-Effect Transistorsen_US
dc.subject.otherSurface Superlattice Formation in III-V Field-Effect Transistorsen_US
dc.subject.otherInvestigation of One-Dimensional Conductivity in Multiple, Parallel Inversion Linesen_US
dc.subject.otherElectron Transport in MOSFETs in Si with Deep-Submicron Channel Lengthsen_US
dc.subject.otherApplication of the Shubnikov-de Haas Oscillations in Characterization of Si MOSFETsen_US
dc.subject.otherApplication of the Shubnikov-de Haas Oscillations in Characterization of GaAs MODFETsen_US
dc.subject.otherCrystalline Films on Amorphous Substratesen_US
dc.subject.otherIon-Beam-Enhanced Grain Growth in Thin Filmsen_US
dc.subject.otherEpitaxy via Surface-Energy-Driven Grain Growthen_US
dc.subject.otherSubmicrometer-Period Gold Transmission Gratings for X-Ray Spectroscopyen_US
dc.subject.otherHigh-Dispersion, High-Efficiency Transmission Gratings for Astrophysical X-Ray Spectroscopyen_US
dc.subject.otherSoft X-Ray Interferometer Gratingsen_US
dc.titleSubmicron Structures Technology and Researchen_US
dc.typeTechnical Reporten_US


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