Show simple item record

dc.contributor.authorMelngailis, Johnen_US
dc.contributor.authorMurguia, James E.en_US
dc.contributor.authorShepard, Mark I.en_US
dc.contributor.authorMusil, Christian R.en_US
dc.contributor.authorLezec, Henri J.en_US
dc.contributor.authorZamani, Susanen_US
dc.contributor.authorIsmail, Khaliden_US
dc.contributor.authorMahoney, Leonard J.en_US
dc.contributor.authorHuh, Jeung-Sooen_US
dc.contributor.authorSwain, Herbert H.en_US
dc.contributor.authorBlauner, Patricia G.en_US
dc.contributor.authorRo, Jaesangen_US
dc.contributor.authorButt, Yousafen_US
dc.contributor.authorThompson, Carl V.en_US
dc.contributor.authorDubner, Andrew D.en_US
dc.contributor.authorWagner, Alfreden_US
dc.contributor.authorTao, Taoen_US
dc.contributor.authorXue, Zilingen_US
dc.contributor.authorKaesz, Herbert D.en_US
dc.date.accessioned2010-07-16T04:12:11Z
dc.date.available2010-07-16T04:12:11Z
dc.date.issued1989-01-01 to 1989-12-31en_US
dc.identifierRLE_PR_132_01_01s_03en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/57123
dc.descriptionContains reports on ten research projects.en_US
dc.description.sponsorshipU.S. Army Research Office Contract DAAL03-88-K-0108en_US
dc.description.sponsorshipHughes Research Laboratories Fellowshipen_US
dc.description.sponsorshipSEMATECHen_US
dc.description.sponsorshipCharles S. Draper Laboratory Contract DL-H-261827en_US
dc.description.sponsorshipU.S. Army Research Office Contract DAAL03-87-K-0126en_US
dc.description.sponsorshipIBM General Technologies Divisionen_US
dc.description.sponsorshipIBM Research Divisionen_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1989en_US
dc.relation.ispartofSolid State Physics, Electronics and Opticsen_US
dc.relation.ispartofMaterials and Fabricationen_US
dc.relation.ispartofFocused Ion Beam Fabricationen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 132en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherFocused Ion Beam Fabricationen_US
dc.subject.otherDevelopment of Focused Ion Beam Implantationen_US
dc.subject.otherDevelopment of Focused Ion Beam Lithographyen_US
dc.subject.otherFrequency Tunable Gunn Diodes Fabricated by Focused Ion Beam Implantationen_US
dc.subject.otherNMOS Transistors with Focused Ion Beam Implanted Channel Regionsen_US
dc.subject.otherGaAs MESFETs Fabricated with Focused Ion Beam Channel Implantsen_US
dc.subject.otherFocused Ion Beam Exposure of Resistsen_US
dc.subject.otherFocused Ion Beam Induced Deposition of Low Resistivity Gold Structuresen_US
dc.subject.otherFundamental Properties of Ion Induced Depositionen_US
dc.subject.otherIn-Situ Measurement of Gas Adsorptionen_US
dc.subject.otherIn-Situ Measurement of Ion Induced Depositionen_US
dc.subject.otherFocused Ion Beam Induced Deposition of Platinumen_US
dc.titleFocused Ion Beam Fabricationen_US
dc.typeTechnical Reporten_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record