High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications

Author(s)
del Alamo, Jesús A.; Awanol, Yuji; Bahl, Sandeep R.; Bennett, Brian B.; Leary, Michael H.; ... Show more
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Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.
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Description
Contains an introduction and a report on one research project.
Date issued
1991-01-01
URI
http://hdl.handle.net/1721.1/57201
Publisher
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
Other identifiers
RLE_PR_134_01_01s_02
Series/Report no.
Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 134
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