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High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications

dc.contributor.authordel Alamo, Jesús A.en_US
dc.contributor.authorAwanol, Yujien_US
dc.contributor.authorBahl, Sandeep R.en_US
dc.contributor.authorBennett, Brian B.en_US
dc.contributor.authorLeary, Michael H.en_US
dc.contributor.authorMoolji, Akbar A.en_US
dc.contributor.authorDonovan, Kelley S.en_US
dc.contributor.authorOdoardi, Angela R.en_US
dc.date.accessioned2010-07-16T04:32:51Z
dc.date.available2010-07-16T04:32:51Z
dc.date.issued1991-01-01 to 1991-12-31en_US
dc.identifierRLE_PR_134_01_01s_02en_US
dc.identifier.urihttp://hdl.handle.net/1721.1/57201
dc.descriptionContains an introduction and a report on one research project.en_US
dc.description.sponsorshipCharles S. Draper Laboratories, Inc. Contract DL-H-418488en_US
dc.description.sponsorshipFujitsu Laboratoriesen_US
dc.description.sponsorshipJoint Services Electronics Program Contract DAAL03-89-C-0001en_US
dc.description.sponsorshipJoint Services Electronics Program Contract DAAL03-92-C-0001en_US
dc.description.sponsorshipTexas Instrumentsen_US
dc.language.isoenen_US
dc.publisherResearch Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)en_US
dc.relation.ispartofMassachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1991en_US
dc.relation.ispartofSolid State Physics, Electronics and Opticsen_US
dc.relation.ispartofMaterials and Fabricationen_US
dc.relation.ispartofHigh-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunicationsen_US
dc.relation.ispartofseriesMassachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 134en_US
dc.rightsCopyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved.en_US
dc.subject.otherHigh-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunicationsen_US
dc.subject.otherQuantum-channel InAIAs/n⁺ -InGaAs MIDFETsen_US
dc.titleHigh-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunicationsen_US
dc.typeTechnical Reporten_US


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